APT6030BVFR |
RFQ for APT6030BVFR Required Field |
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| Technical/Catalog Information | APT6030BVFRG |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 21A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 10.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 3750pF @ 25V |
| Power - Max | 298W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 150nC @ 10V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT6030BVFRG APT6030BVFRG |
| Product | Manufacturers | Pack | D/C |
| APT6030BVFR | - | TO-247 [B] | `06+(pb-free) |
Features |
| • Fast Recovery Body Diode• 100% Avalanche Tested• Lower Leakage • Popular TO-247 Package• Faster Switching |
| Symbol | Parameter | APT30M70BVFR | UNIT |
| VDSS | Drain-Source Voltage | 600 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 21 | Amps |
| IDM | Pulsed Drain Current | 84 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 300 | Watts |
| Linear Derating Factor | 2.4 | W/°C | |
| TJ ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 21 | Amps |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| EAS | Single Pulse Avalanche Energy | 1300 |
